In the present study, nanostructure Cadmium sulfide (CdS) thin films on Si Ptype
substrates heterojunction solar cell has been made by using a pulsed 532 nm
Nd:YAG laser. Deposition of films is achieved at 200 °C substrate temperatures and
oxygen pressure 10-1 Torr. X-ray diffraction (XRD), Scanning electron microscopy
(SEM), atomic force microscope (AFM) and UV-VIS transmittance analyses were
employed to characterize thin films. XRD measurements approved that CdS film is a
hexagonal Wurtzite structure. The morphology of deposited films were characterized
by scanning electron microscope (SEM) and atomic force microscope (AFM), the
grain size value (18) nm and rms roughness values are (12.6 nm) for thin films
deposited at 200ºC. UV-VIS transmittance measurements have shown that our films
are highly transparent in the visible wavelength region, with an average transmittance
of ~90% . The direct optical band gap of the film has been found to be 2.2 eV.The
photovoltaic characteristics included short circuit current (Jsc), open circuit voltage
(Voc), where the maximum (Jsc) and (Voc)obtained at AM1 were 29.3 (mA cm
-2
)
and 635(mV), respectively. The fill factor (FF) was (0.44). The fabricated cell
exhibits good performance with 7.8 % conversion efficiency.
Keywords: Nanostructure CdS /Si Heterojunction, Solar Cell, Conversion Efficiency.
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